Performance Comparison of CMOS and FinFET based Novel 9T SRAM Bit Cell

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Ashwini Soni
Sukrit Bhattacharya
Shashwat Anand
Meghank Gupta
J.K. Kasthuri Bha

Abstract

This paper aims to analyze and compare the parameters of a CMOS 90nm technology and FinFET with gate length 18nm, based 9T SRAM Bit Cell. These circuits are implemented to study the characteristics such as voltage transfer characteristics, delay, area and power consumption. Furthermore, in the case of FinFET SRAM cell, power consumption has been reduced by 39.4% with less propagation delay and 18% faster for read/write operations as compared to the CMOS technology. Also the read and write operations of the proposed SRAM cell are completely isolated from each other i.e. either read or write operation will be performed at a time.

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How to Cite
Ashwini Soni, Sukrit Bhattacharya, Shashwat Anand, Meghank Gupta, & J.K. Kasthuri Bha. (2022). Performance Comparison of CMOS and FinFET based Novel 9T SRAM Bit Cell. IIRJET, 5(3). https://doi.org/10.32595/iirjet.org/v5i3.2020.125